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Electrodeposition of CuInSe2 absorber layers from pH buffered and non-buffered sulfate-based solutions

Identifieur interne : 006851 ( Main/Repository ); précédent : 006850; suivant : 006852

Electrodeposition of CuInSe2 absorber layers from pH buffered and non-buffered sulfate-based solutions

Auteurs : RBID : Pascal:08-0155782

Descripteurs français

Pascal (Inist)
- Dépôt électrolytique, Effet pH, Couche mince, Revêtement électrodéposé, Composition phase, Cristallinité, Recristallisation, Cellule photovoltaïque, Solution tampon, Séléniure de cuivre, Séléniure d'indium, Chalcopyrite, Sulfate de lithium, Molybdène, CuInSe2, Substrat verre, CuSO4, SeO2, Li O S, 8115P, 6855N, 6855J.
Wicri :
- concept : Molybdène.

English descriptors

KwdEn :
- Buffer solution, Chalcopyrite, Copper selenides, Crystallinity, Electrodeposited coatings, Electrodeposition, Indium selenides, Lithium sulfate, Molybdenum, Phase composition, Photovoltaic cells, Recrystallization, Thin films, pH effect.

Abstract

CuInSe₂ (CIS) thin films were deposited on Mo/glass substrates by one-step electrodeposition from aqueous baths containing CuSO₄, In₂ (SO₄)₃ and SeO₂ with Li₂SO₄ electrolyte. The quality of the electrodeposited films depended on the presence of pH buffer in the bath. CIS films deposited from non-pH buffered baths showed pronounced (112) orientation, while films exhibiting more random orientation were obtained from pH buffered baths. Denser, smoother samples were obtained from non-pH buffered baths, though with no difference in film composition. As-deposited films exhibit low crystallinity and require recrystallization by annealing in H₂Se. Best devices, ∼ 9%, were obtained with CuInSe₂ films deposited from non-pH buffered baths.

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Pascal:08-0155782

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrodeposition of CuInSe<sub>2</sub>
 absorber layers from pH buffered and non-buffered sulfate-based solutions</title>
<author><name sortKey="Sene, C" uniqKey="Sene C">C. Sene</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire des Semi-conducteurs et d'Energie Solaire (LASES), Université Cheikh Anta Diop</s1>
<s2>Dakar</s2>
<s3>SEN</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Sénégal</country>
<wicri:noRegion>Dakar</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Calixto, M Estela" uniqKey="Calixto M">M. Estela Calixto</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Energy Conversion (IEC), University of Delaware</s1>
<s2>Newark, DE 19716-3820</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Newark, DE 19716-3820</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Dobson, Kevin D" uniqKey="Dobson K">Kevin D. Dobson</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Energy Conversion (IEC), University of Delaware</s1>
<s2>Newark, DE 19716-3820</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Newark, DE 19716-3820</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Birkmire, Robert W" uniqKey="Birkmire R">Robert W. Birkmire</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Energy Conversion (IEC), University of Delaware</s1>
<s2>Newark, DE 19716-3820</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Newark, DE 19716-3820</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">08-0155782</idno>
<date when="2008">2008</date>
<idno type="stanalyst">PASCAL 08-0155782 INIST</idno>
<idno type="RBID">Pascal:08-0155782</idno>
<idno type="wicri:Area/Main/Corpus">006D30</idno>
<idno type="wicri:Area/Main/Repository">006851</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Buffer solution</term>
<term>Chalcopyrite</term>
<term>Copper selenides</term>
<term>Crystallinity</term>
<term>Electrodeposited coatings</term>
<term>Electrodeposition</term>
<term>Indium selenides</term>
<term>Lithium sulfate</term>
<term>Molybdenum</term>
<term>Phase composition</term>
<term>Photovoltaic cells</term>
<term>Recrystallization</term>
<term>Thin films</term>
<term>pH effect</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Dépôt électrolytique</term>
<term>Effet pH</term>
<term>Couche mince</term>
<term>Revêtement électrodéposé</term>
<term>Composition phase</term>
<term>Cristallinité</term>
<term>Recristallisation</term>
<term>Cellule photovoltaïque</term>
<term>Solution tampon</term>
<term>Séléniure de cuivre</term>
<term>Séléniure d'indium</term>
<term>Chalcopyrite</term>
<term>Sulfate de lithium</term>
<term>Molybdène</term>
<term>CuInSe2</term>
<term>Substrat verre</term>
<term>CuSO4</term>
<term>SeO2</term>
<term>Li O S</term>
<term>8115P</term>
<term>6855N</term>
<term>6855J</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Molybdène</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">CuInSe<sub>2</sub>
 (CIS) thin films were deposited on Mo/glass substrates by one-step electrodeposition from aqueous baths containing CuSO<sub>4</sub>
, In<sub>2</sub>
 (SO<sub>4</sub>
)<sub>3</sub>
 and SeO<sub>2</sub>
 with Li<sub>2</sub>
SO<sub>4</sub>
 electrolyte. The quality of the electrodeposited films depended on the presence of pH buffer in the bath. CIS films deposited from non-pH buffered baths showed pronounced (112) orientation, while films exhibiting more random orientation were obtained from pH buffered baths. Denser, smoother samples were obtained from non-pH buffered baths, though with no difference in film composition. As-deposited films exhibit low crystallinity and require recrystallization by annealing in H<sub>2</sub>
Se. Best devices, ∼ 9%, were obtained with CuInSe<sub>2</sub>
 films deposited from non-pH buffered baths.</div>
</front>
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 absorber layers from pH buffered and non-buffered sulfate-based solutions</s1>
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<fA11 i1="01" i2="1"><s1>SENE (C.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>CALIXTO (M. Estela)</s1>
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<fA11 i1="03" i2="1"><s1>DOBSON (Kevin D.)</s1>
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<fA11 i1="04" i2="1"><s1>BIRKMIRE (Robert W.)</s1>
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<fA14 i1="01"><s1>Laboratoire des Semi-conducteurs et d'Energie Solaire (LASES), Université Cheikh Anta Diop</s1>
<s2>Dakar</s2>
<s3>SEN</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Institute of Energy Conversion (IEC), University of Delaware</s1>
<s2>Newark, DE 19716-3820</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA20><s1>2188-2194</s1>
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<fA21><s1>2008</s1>
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<fA60><s1>P</s1>
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<fA61><s0>A</s0>
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<fA66 i1="01"><s0>CHE</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>CuInSe<sub>2</sub>
 (CIS) thin films were deposited on Mo/glass substrates by one-step electrodeposition from aqueous baths containing CuSO<sub>4</sub>
, In<sub>2</sub>
 (SO<sub>4</sub>
)<sub>3</sub>
 and SeO<sub>2</sub>
 with Li<sub>2</sub>
SO<sub>4</sub>
 electrolyte. The quality of the electrodeposited films depended on the presence of pH buffer in the bath. CIS films deposited from non-pH buffered baths showed pronounced (112) orientation, while films exhibiting more random orientation were obtained from pH buffered baths. Denser, smoother samples were obtained from non-pH buffered baths, though with no difference in film composition. As-deposited films exhibit low crystallinity and require recrystallization by annealing in H<sub>2</sub>
Se. Best devices, ∼ 9%, were obtained with CuInSe<sub>2</sub>
 films deposited from non-pH buffered baths.</s0>
</fC01>
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<fC03 i1="01" i2="3" l="FRE"><s0>Dépôt électrolytique</s0>
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<fC03 i1="01" i2="3" l="ENG"><s0>Electrodeposition</s0>
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<fC03 i1="02" i2="X" l="FRE"><s0>Effet pH</s0>
<s5>02</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>03</s5>
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<fC03 i1="03" i2="3" l="ENG"><s0>Thin films</s0>
<s5>03</s5>
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<fC03 i1="04" i2="3" l="FRE"><s0>Revêtement électrodéposé</s0>
<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>12</s5>
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<s5>12</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Solución de amortiguación</s0>
<s5>12</s5>
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<s5>18</s5>
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<fC03 i1="13" i2="X" l="ENG"><s0>Lithium sulfate</s0>
<s5>18</s5>
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<fC03 i1="13" i2="X" l="SPA"><s0>Litio sulfato</s0>
<s5>18</s5>
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<fC03 i1="14" i2="3" l="FRE"><s0>Molybdène</s0>
<s2>NC</s2>
<s5>19</s5>
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<s2>NC</s2>
<s5>19</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>CuInSe2</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Substrat verre</s0>
<s4>INC</s4>
<s5>47</s5>
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<fC03 i1="17" i2="3" l="FRE"><s0>CuSO4</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>SeO2</s0>
<s4>INC</s4>
<s5>49</s5>
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<fC03 i1="19" i2="3" l="FRE"><s0>Li O S</s0>
<s4>INC</s4>
<s5>50</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>8115P</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>6855N</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>6855J</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fN21><s1>098</s1>
</fN21>
</pA>
</standard>
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</record>

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Electrodeposition of CuInSe2 absorber layers from pH buffered and non-buffered sulfate-based solutions

Electrodeposition of CuInSe2 absorber layers from pH buffered and non-buffered sulfate-based solutions

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri